III-nitride nanowire LED with strain modified surface active region and method of making thereof

US9281442B2 · kind B2 · utility

Assignee

• GLO AB · SE

Inventors

• Linda Romano · Sunnyvale, US
• Sungsoo Yi · Sunnyvale, US
• Patrik Svensson · Palo Alto, US
• Nathan Gardner · Provo, US

Key dates

• Filing date: Dec 15, 2014
• Grant date: Mar 8, 2016
• Expiry date: Dec 15, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/833

Abstract

A light emitting diode (LED) device includes a semiconductor nanowire core, and an In(Al)GaN active region quantum well shell located radially around the semiconductor nanowire core. The active quantum well shell contains indium rich regions having at least 5 atomic percent higher indium content than indium poor regions in the same shell. The active region quantum well shell has a non-uniform surface profile having at least 3 peaks. Each of the at least 3 peaks is separated from an adjacent one of the at least 3 peaks by a valley, and each of the at least 3 peaks extends at least 2 nm in a radial direction away from an adjacent valley.