Apparatus of producing silicon single crystal and method of producing silicon single crystal
US9284660B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 8, 2011 |
| Grant date | Mar 15, 2016 |
| Priority date | — |
| Expiry date | Jan 13, 2035 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T117/1008
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
An apparatus of producing a silicon single crystal including: an imaging device; a heat shield that has a circular opening; a first operation unit that operates the imaging device and takes a real image of the heat shield and a mirror image of the heat shield reflected on a surface of the silicon melt, measures a spacing between the real image and the mirror image, and calculates a position of a melt-surface; a second operating unit that operates the imaging device and takes an image of a bright-zone in the vicinity of the solid-liquid interface, and calculates a position of the melt-surface based on the image of the bright zone; and a controlling unit that refers a data of the position of the silicon melt obtained by the first operation unit and the second operation unit, and controls the position of the silicon melt.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.