Processing apparatus and method of treating a substrate
US9287085B2 · kind B2 · utility
1Cited by
4References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 12, 2014 |
| Grant date | Mar 15, 2016 |
| Priority date | — |
| Expiry date | Oct 15, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/1503
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A processing apparatus including a process chamber, a plasma source disposed within the process chamber, wherein the plasma source is movable in a first direction and is configured to emit an ion beam along a second direction that is orthogonal to the first direction. The apparatus may further include a platen disposed within the process chamber for supporting a substrate, and an ion beam current sensor that is disposed adjacent to the platen.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.