Fabrication method for dicing of semiconductor wafers using laser cutting techniques
US9287175B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 3, 2014 |
| Grant date | Mar 15, 2016 |
| Priority date | — |
| Expiry date | Jan 3, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02076
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A fabrication method for dicing semiconductor wafers using laser cutting techniques, which can effectively prevent the devices on semiconductor die units from the phenomenon of etching undercut caused by the sequential steps after laser cutting, comprises following steps: covering the wafer surface with a protection layer; dicing the wafer by laser and separating the die units from each other; removing the laser cutting residues on the devices on the die units via wet etching by an acidic water solution; removing the protection layer by a non-acidic water solution and cleaning the devices on the die units. The selection of materials for the protection layer must consider the following factors: where (1) the materials for the protection layer must have relatively good properties for adhering and covering on the wafer; (2) the materials for the protection layer must be corrosion-resistant to the acidic water solution for etching residues.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.