Semiconductor device comprising metal-based eFuses of enhanced programming efficiency by enhancing heat generation

US9287211B2 · kind B2 · utility

Assignee

• GlobalFoundries Inc. · KY

Inventors

• Andreas Kurz · Oberursel, DE
• Jens Poppe · Radebeul, DE
• Matthias Kessler · Dresden, DE

Key dates

• Filing date: Feb 23, 2011
• Grant date: Mar 15, 2016
• Expiry date: Dec 26, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/3011
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

In sophisticated semiconductor devices, electronic fuses may be provided in the metallization system, wherein a superior two-dimensional configuration of the metal line, for instance as a helix-like configuration, may provide superior thermal conditions in a central line portion, which in turn may result in a more pronounced electromigration effect for a given programming current. Consequently, the size of the electronic fuse, at least in one lateral direction, and also the width of corresponding transistors connected to the electronic fuse, may be reduced.