Method for producing a high-temperature and temperature-change resistant connection between a semiconductor module and a connection partner

US9287232B2 · kind B2 · utility

Assignee

• DANFOSS SILICON POWER GMBH · DE

Inventors

• Mathias Kock · Gokels, DE
• Ronald Eisele · Surendorf, DE

Key dates

• Filing date: Feb 4, 2010
• Grant date: Mar 15, 2016
• Expiry date: Feb 4, 2030

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/19043
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

The invention relates to a method for producing a connection between a semiconductor component and semiconductor component and semiconductor module resistant to high temperatures and temperature changes by means of a temperature impinging process, wherein a metal powder suspension is applied to the areas of the semiconductor module to be connected later; the suspension layer is dried, outgassing the volatile components and generating a porous layer; the porous layer is pre-sealed without complete sintering taking place throughout the suspension layer; and, in order to obtain a solid electrically and thermally conductive connection of a semiconductor module to a connection partner from the group of: substrate, further semiconductor or interconnect device, the connection is a sintered connection generated without compression by increasing the temperature and made of a dried metal powder suspension that has undergone a first transport-safe contact with the connection partner in a pre-compression step and has been solidified at zero pressure using temperature sintering.