Electronic device and protection circuit

US9287254B2 · kind B2 · utility

Assignee

• STMicroelectronics SA

Inventors

• Jean Jimenez · Crolles, FR
• Boris Heitz · Grenoble, FR
• Johan Bourgeat · Le Pont-de-Beauvoisin, FR

Key dates

• Filing date: Jan 16, 2015
• Grant date: Mar 15, 2016
• Expiry date: Jan 16, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D89/713

Abstract

An electronic device includes a first device terminal and a second device terminal. A first and a second thyristor are reverse-connected between the two device terminals. A first and a second MOS transistor are respectively coupled between the conduction electrodes (emitters and collectors) of the two NPN transistors of the two thyristors. A third MOS transistor is coupled between the emitters of the two NPN bipolar transistors of the two thyristors and a fourth MOS transistor is coupled between the bases of the two PNP bipolar transistors of the two thyristors. A gate region is common to all the MOS transistors and a semiconductor substrate region includes the substrates of all the MOS transistors.