Method for manufacturing a semiconductor device comprising transistors each having a different effective work function
US9287273B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 8, 2015 |
| Grant date | Mar 15, 2016 |
| Priority date | — |
| Expiry date | Jun 8, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The disclosed technology generally relates a semiconductor device comprising transistors, and more particularly to a semiconductor device comprising transistors each having a gate stack with a different effective work function, and methods of fabricating such a device. In one aspect, the method of fabricating the semiconductor comprises providing at least two channel regions in the substrate and providing a dielectric layer on the substrate. The method additionally includes forming a plurality of gate regions by providing openings in the dielectric layer. The method further includes providing a gate dielectric layer in the openings and providing on the gate dielectric layer of each of the gate regions a barrier layer stack having different thickness along the different gate regions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.