Patent · US Active

Imaging sensor structure and method

US9287312B2 · kind B2 · utility

5Cited by
2References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateDec 30, 2013
Grant dateMar 15, 2016
Priority date
Expiry dateMar 22, 2034

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10F39/813

Abstract

The present disclosure provides an embodiment of a method for fabricating a three dimensional (3D) image sensor structure. The method includes providing to an image sensor substrate having image sensors formed therein and a first interconnect structure formed thereon, and a logic substrate having a logic circuit formed therein and a second interconnect structure formed thereon; bonding the logic substrate to the image sensor substrate in a configuration that the first interconnect structure and second interconnect structure are sandwiched between the logic substrate and the image sensor substrate; and forming a conductive feature extending from the logic substrate to the first interconnect structure, thereby electrically coupling the logic circuit to the image sensors.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.