Method for forming ohmic N-contacts at low temperature in inverted metamorphic multijunction solar cells with contaminant isolation
US9287438B1 · kind B1 · utility
11Cited by
57References
19Claims
0Family size
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Key dates
| Filing date | Jan 30, 2013 |
| Grant date | Mar 15, 2016 |
| Priority date | — |
| Expiry date | Sep 22, 2034 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
Abstract
A method of manufacturing a solar cell assembly by providing a first substrate; depositing on the first substrate a sequence of layers of semiconductor material forming a solar cell; mounting a supporting member on top of the sequence of layers using a temporary adhesive bonding material to form a processing assembly; removing the first substrate; and depositing a contact layer including germanium and palladium on the top surface of the solar cell at a relatively low temperature so that the temporary adhesive allows the processing assembly to remain attached.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.