Dielectric thin film on electrodes for resistance change memory devices
US9287498B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Sep 14, 2011 |
| Grant date | Mar 15, 2016 |
| Priority date | — |
| Expiry date | Sep 17, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/882
Abstract
Embodiments of the present disclosure describe techniques and configurations for increasing thermal insulation in a resistance change memory device, also known as a phase change memory (PCM) device. In one embodiment, an apparatus includes a storage structure of a PCM device, the storage structure having a chalcogenide material, an electrode having an electrically conductive material, the electrode having a first surface that is directly coupled with the storage structure, and a dielectric film having a dielectric material, the dielectric film being directly coupled with a second surface of the electrode that is disposed opposite to the first surface. Other embodiments may be described and/or claimed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.