Photo mask and method for forming pattern using the same
US9291889B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 26, 2014 |
| Grant date | Mar 22, 2016 |
| Priority date | — |
| Expiry date | Nov 12, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32139
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An opening width of a main pattern is a width with which a transcription pattern is formed on a target member to be exposed by transmitted exposure light, and is a dimension of 0.8×(λ/NA)×M or less (where λ is a wavelength of the exposure light, and NA and M are a numerical aperture and a reduction ratio of a reduced projection optical system of an exposure apparatus). Each of a first auxiliary pattern adjacent to the main pattern and a second auxiliary pattern located outside the first auxiliary pattern to be adjacent thereto has a width with which a transcription pattern is not formed by the exposure light and generates diffracted light. A first distance between respective centers of the main pattern and the first auxiliary pattern is greater than a second distance between respective centers of the first auxiliary pattern and the second auxiliary pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.