Semiconductor device and method of fabricating the same
US9293336B2 · kind B2 · utility
7Cited by
5References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 22, 2014 |
| Grant date | Mar 22, 2016 |
| Priority date | — |
| Expiry date | Apr 22, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76805
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a storage node contact on a substrate, and a lower electrode on the storage node contact, a lower sidewall of the lower electrode being covered by a contact residue of a same material as the storage node contact.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.