Semiconductor device including air gaps and method of fabricating the same
US9293362B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 13, 2013 |
| Grant date | Mar 22, 2016 |
| Priority date | — |
| Expiry date | Mar 13, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
This technology provides a semiconductor device and a method of fabricating the same, which may reduce parasitic capacitance between adjacent conductive structures. The method of fabricating a semiconductor device may include forming a plurality of bit line structures over a substrate, forming contact holes between the bit line structures, forming sacrificial spacers over sidewalls of the contact holes, forming first plugs recessed into the respective contact holes, forming air gaps by removing the sacrificial spacers, forming capping structures capping the air gaps while exposing top surfaces of the first plugs, and forming second plugs over the first plugs.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.