Patent · US Active

Method for processing a semiconductor workpiece with metallization

US9293371B2 · kind B2 · utility

1Cited by

0References

8Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Anja Reitmeier · Regensburg, DE
Hermann Wendt · Grasbrunn, DE
Thomas Fischer · Umkirch, DE
Bernhard Weidgans · Bernhardswald, DE
Gudrun Stranzl · Eisenlohrsweg, AT
Tobias Schmidt · Munich, DE
Dietrich Bonart · Bad Abbach, DE

Key dates

Filing date	Jun 24, 2015
Grant date	Mar 22, 2016
Priority date	—
Expiry date	Jun 24, 2035

Classification

Technology area (CPC H)Electricity
CPC primaryH01L21/76892
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method for processing a semiconductor workpiece is provided, which may include: providing a semiconductor workpiece including a metallization layer stack disposed at a side of the semiconductor workpiece, the metallization layer stack including at least a first layer and a second layer disposed over the first layer, wherein the first layer contains a first material and the second layer contains a second material that is different from the first material; patterning the metallization layer stack, wherein patterning the metallization layer stack includes wet etching the first layer and the second layer by means of an etching solution that has at least substantially the same etching rate for the first material and the second material.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.