Heat radiation structure for semiconductor device
US9293390B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 20, 2013 |
| Grant date | Mar 22, 2016 |
| Priority date | — |
| Expiry date | Dec 20, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/13055
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device with improved heat radiation and improved insulation performance. The semiconductor device includes a semiconductor element, a lead frame bonded on one surface to the semiconductor element, a first insulating layer disposed on the other surface of the lead frame, and a metal base plate connected to the lead frame with the first insulating layer interposed between them, wherein an outer peripheral portion of the first insulating layer is inside an outer peripheral portion of the metal base plate, and the outer peripheral portion of the first insulating layer is covered with a second insulating layer having higher moisture resistance and higher insulation performance than the first insulating layer, the outer peripheral portion including an electric field concentrated point in an outer peripheral portion of the lead frame.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.