Small-grain three-dimensional memory
US9293509B2 · kind B2 · utility
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40References
20Claims
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Key dates
| Filing date | Feb 5, 2015 |
| Grant date | Mar 22, 2016 |
| Priority date | — |
| Expiry date | Feb 5, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8833
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The present invention discloses a small-grain three-dimensional memory (3D-MSG). Each of its memory cells comprises a thin-film diode with critical dimension no larger than 40 nm. The thin-film diode comprises at least a small-grain material, whose grain size G is substantially smaller than the diode size D. The small-grain material is preferably a nano-crystalline material or an amorphous material. The critical dimension f of the small-grain diode is smaller than the critical dimension F of the single-crystalline transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.