Patent · US Active

Optoelectronic semiconductor chip having reduced strain between different constituent materials of the chip

US9293652B2 · kind B2 · utility

0Cited by

3References

13Claims

0Family size

Assignee

OSRAM Opto Semiconductors GmbH · DE

Inventors

Werner Bergbauer · Windberg, DE
Patrick Rode · Regensburg, DE
Martin Strassburg · Tegernheim, DE

Key dates

Filing date	Aug 5, 2015
Grant date	Mar 22, 2016
Priority date	—
Expiry date	Aug 5, 2035

Classification

Technology area (CPC H)Electricity
CPC primaryH10H20/8516
WIPO fieldMicro-structural and nano-technology
WIPO sectorChemistry

Abstract

An optoelectronic semiconductor chip includes a semiconductor layer stack including a nitride compound semiconductor material on a carrier substrate, wherein the semiconductor layer stack includes an active layer that emits an electromagnetic radiation, the semiconductor layer stack being arranged between a layer of a first conductivity and a layer of a second conductivity, the layer of the first conductivity is adjacent a front of the semiconductor layer stack, the layer of the first conductivity electrically connects to a first electrical connection layer covering at least a portion of a back of the semiconductor layer stack, and the layer of the second conductivity type electrically connects to a second electrical connection layer arranged at the back.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.