Apparatus and method for determining a depth of a region having a high aspect ratio that protrudes into a surface of a semiconductor wafer
US9297645B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Apr 5, 2012 |
| Grant date | Mar 29, 2016 |
| Priority date | — |
| Expiry date | Apr 5, 2032 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01B2210/56
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
An apparatus and method for determining a depth of a region having a high aspect ratio that protrudes into a surface of a semiconductor wafer are provided. The apparatus comprises a multi-wavelength light source, a semiconductor wafer holder for holding a semiconductor wafer, a head for directing the light source onto the semiconductor wafer, a spectrometer for collecting light comprising multiple wavelengths reflected from the semiconductor wafer and analysis means for determining a depth of the region from an interference pattern of light reflected from the semiconductor wafer by performing Fourier domain optical coherence tomography.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.