Patent assignee · DE · COMPANY

PRECITEC OPTRONIK GMBH

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25Patents
25Active
25Granted
51Portfolio score

Filing activity: Mar 4, 2008 → May 23, 2024 · 2 expiring within 5 years

Most-cited patents

PatentTitleAreaCited byStatus
US8982339B2 Material-working device with in-situ measurement of the working distance Physics 29 Active
US8410392B2 Machining device and method for machining material Physics 20 Active
US9494409B2 Test device for testing a bonding layer between wafer-shaped samples and test process for testing the bonding layer Physics 11 Active
US8716039B2 Monitoring apparatus and method for in-situ measurement of wafer thicknesses for monitoring the thinning of semiconductor wafers and thinning apparatus comprising a wet etching apparatus and a monitoring apparatus Electricity 9 Active
US9297645B2 Apparatus and method for determining a depth of a region having a high aspect ratio that protrudes into a surface of a semiconductor wafer Physics 9 Active
US10228551B1 Device and method for optically measuring a measurement object Physics 8 Active
US9500471B2 Optical measuring device and method for acquiring in situ a stage height between a support and an edge region of an object Physics 8 Active
US9677871B2 Optical measuring method and measuring device having a measuring head for capturing a surface topography by calibrating the orientation of the measuring head Physics 7 Active
US10234265B2 Distance measuring device and method for measuring distances Physics 4 Active
US9982994B2 Optical measuring method and measuring device having a measuring head for capturing a surface topography by calibrating the orientation of the measuring head Physics 3 Active
US8699038B2 Apparatus and method for monitoring a thickness of a silicon wafer with a highly doped layer Electricity 2 Active
US10449631B2 Machining head for a laser machining device Physics 2 Active
US10466357B1 Optical measuring device Physics 1 Active
US10260941B2 Chromatic confocal distance sensor Physics 1 Active
US9230817B2 Apparatus and method for monitoring a thickness of a silicon wafer with a highly doped layer Electricity 0 Active
US11460577B2 Distance measuring device Physics 0 Active
US11027364B2 Method and device for measuring the depth of the vapor capillary during a machining process with a high-energy beam Physics 0 Active
US10731965B1 Phosphor light source for CLS or multipoint Physics 0 Active
US10695863B1 Method and device for the controlled machining of a workpiece Physics 0 Active
US10725178B2 Optical measuring device Physics 0 Active
US9770783B2 Method for measuring the distance between a workpiece and a machining head of a laser machining apparatus Physics 0 Active
US12264914B2 Device and method for measuring wafers Physics 0 Active
US11219967B2 Machining head for a laser machining device Physics 0 Active
US10571249B1 Optical measuring device and method Physics 0 Active
US10762348B2 Method and apparatus for determining the position and/or the orientation of an eye Physics 0 Active

Source: USPTO / EPO open patent data. Counts and citation impact are objective bibliographic measures.