Extreme ultraviolet light (EUV) photomasks, and fabrication methods thereof
US9298083B2 · kind B2 · utility
2Cited by
2References
20Claims
0Family size
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Key dates
| Filing date | May 16, 2014 |
| Grant date | Mar 29, 2016 |
| Priority date | — |
| Expiry date | Sep 20, 2034 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/24
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An extreme ultraviolet photomask comprises a reflective layer over a substrate, a capping layer over the reflective layer, a hard mask layer over the capping layer, and an absorber. The absorber is in the hard mask layer, the capping layer and the reflective layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.