Patent · US Active

Three-dimensional wordline sharing memory

US9299391B2 · kind B2 · utility

1Cited by
0References
18Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJan 21, 2014
Grant dateMar 29, 2016
Priority date
Expiry dateMar 15, 2034

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10B41/20
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

A three dimensional (3D) circuit includes a first layer including at least a first memory cell, a second layer including at least a second memory cell, and a wordline shared by the first memory cell and the second memory cell. The first and second memory cells can be adjacent memory cells or bit cells coupled to different bit lines.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.