Copper-alloy barrier layers for metallization in thin-film transistors and flat panel displays
US9299472B2 · kind B2 · utility
5Cited by
1References
22Claims
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Key dates
| Filing date | Jun 5, 2014 |
| Grant date | Mar 29, 2016 |
| Priority date | — |
| Expiry date | Jun 5, 2034 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/12931
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
In various embodiments, electronic devices such as thin-film transistors incorporate electrodes featuring a conductor layer and, disposed below the conductor layer, a barrier layer comprising an alloy of Cu and one or more refractory metal elements selected from the group consisting of Ta, Nb, Mo, W, Zr, Hf, Re, Os, Ru, Rh, Ti, V, Cr, and Ni.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.