Smart measurement techniques to enhance inline process control stability
US9299621B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Sep 12, 2013 |
| Grant date | Mar 29, 2016 |
| Priority date | — |
| Expiry date | Sep 12, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/83
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An integrated circuit includes a number of lateral diffusion measurement structures arranged on a silicon substrate. A lateral diffusion measurement structure includes a p-type region and an n-type region which cooperatively span a predetermined initial distance between opposing outer edges of the lateral diffusion measurement structure. The p-type and n-type regions meet at a p-n junction expected to be positioned at a target junction location after dopant diffusion has occurred.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.