Magnetic sidewalls for write lines in field-induced MRAM and methods of manufacturing them
US9299744B2 · kind B2 · utility
1Cited by
4References
20Claims
0Family size
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Key dates
| Filing date | Dec 10, 2013 |
| Grant date | Mar 29, 2016 |
| Priority date | — |
| Expiry date | Feb 21, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/10
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In one embodiment, there is provided a non-volatile magnetic memory cell. The non-volatile magnetic memory cell comprises a switchable magnetic element; and a word line and a bit line to energize the switchable magnetic element; wherein at least one of the word line and the bit line comprises a magnetic sidewall that is discontinuous.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.