Electrode configurations to increase electro-thermal isolation of phase-change memory elements and associated techniques

US9299747B1 · kind B1 · utility

Assignee

• Intel Corporation · US

Inventors

• Fabio Pellizzer · Boise, US
• Giulio Albini · Boise, US
• Stephen W. Russell · Boise, US
• Max Hineman · Boise, US
• Sanjay Rangan · Boise, US

Key dates

• Filing date: Nov 24, 2014
• Grant date: Mar 29, 2016
• Expiry date: Nov 24, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N70/253

Abstract

Embodiments of the present disclosure describe electrode configurations to increase electro-thermal isolation of phase-change memory elements and associated techniques. In an embodiment, an apparatus includes a plurality of phase-change memory (PCM) elements, wherein individual PCM elements of the plurality of PCM elements include a phase-change material layer, a first electrode layer disposed on the phase-change material layer and in direct contact with the phase-change material layer, and a second electrode layer disposed on the first electrode layer and in direct contact with the first electrode layer. Other embodiments may be described and/or claimed.