Device structure and methods of forming superjunction lateral power MOSFET with surrounding LDD
US9299774B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 16, 2014 |
| Grant date | Mar 29, 2016 |
| Priority date | — |
| Expiry date | Jul 16, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/256
Abstract
A semiconductor device has a substrate and a gate formed over the substrate. An LDD region is formed in the substrate adjacent to the gate. A superjunction is formed in the LDD region while a portion of the LDD region remains between the superjunction and gate. A mask is formed over the substrate. A first region is doped with a first type of dopant using the mask. A stripe is doped with a second type of dopant using a portion of the mask. A drain contact region is formed in the substrate. The first region extends to the drain contact region. The first region and stripe are formed using chain implants. A source field plate and drain field plate are formed over the substrate. A trench is formed in the substrate. A source contact region is formed in the trench.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.