Semiconductor devices containing an epitaxial perovskite/doped strontium titanate structure
US9299799B2 · kind B2 · utility
5Cited by
7References
10Claims
0Family size
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Key dates
| Filing date | Jun 10, 2014 |
| Grant date | Mar 29, 2016 |
| Priority date | — |
| Expiry date | Jun 10, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/691
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Semiconductor devices are provided such as, ferroelectric transistors and floating gate transistors, that include an epitaxial perovskite/doped strontium titanate structure formed above a surface of a semiconductor substrate. The epitaxial perovskite/doped strontium titanate structure includes a stack of, in any order, a doped strontium titanate and a perovskite type oxide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.