Methods of manufacturing high electron mobility transistors
US9299800B2 · kind B2 · utility
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13References
7Claims
0Family size
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Key dates
| Filing date | Apr 15, 2015 |
| Grant date | Mar 29, 2016 |
| Priority date | — |
| Expiry date | Apr 15, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/854
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The methods may include forming a first material layer on a substrate, increasing electric resistance of the first material layer, and forming a source pattern and a drain pattern, which are spaced apart from each other, on the first material layer, a band gap of the source and drain patterns greater than a band gap of a first material layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.