Semiconductor device
US9299857B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 19, 2014 |
| Grant date | Mar 29, 2016 |
| Priority date | — |
| Expiry date | Jun 19, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/126
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a substrate having a first conductivity type, a first heavily-doped region formed in the substrate and having the first conductivity type, a second heavily-doped region formed in the substrate and having the first conductivity type, and an embedded layer formed in the substrate and separated from the first and second heavily-doped regions. The embedded layer has a second conductivity type different from the first conductivity type. A portion of the embedded layer is beneath the first heavily-doped region. A third heavily-doped region is formed in the substrate, between the first and second heavily-doped regions, and contacting the embedded layer, and has the second conductivity type.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.