Spad photodiode of high quantum efficiency
US9299865B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Aug 21, 2014 |
| Grant date | Mar 29, 2016 |
| Priority date | — |
| Expiry date | Aug 21, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/413
- WIPO fieldEnvironmental technology
- WIPO sectorChemistry
Abstract
A SPAD-type photodiode has a semiconductor substrate with a light-receiving surface. A lattice formed of interlaced strips made of a first material covers the light receiving surface. The lattice includes lattice openings with lateral walls covered by a spacer made of a second material. Then first and second materials have different optical indices, and further each optical index is less than or equal to the substrate optical index. A pitch of the lattice is of the order of a magnitude of an operating wavelength of the photodiode. The first and second materials are transparent at that operating wavelength. The lattice is made of a conductive material electrically coupled to an electrical connection node (for example, a bias voltage node).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.