Optimised method for producing electroluminescent nanowires
US9299882B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Oct 10, 2013 |
| Grant date | Mar 29, 2016 |
| Priority date | — |
| Expiry date | Oct 10, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/821
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process for fabricating an array of nanowires on the surface of a substrate, the nanowires comprising a portion capable of emitting radiation under action of an electrical or optical control and at least partially connected to one another electrically via a conductive upper layer, comprises steps allowing a subset of defective nanowires to be identified among active nanowires, the steps comprising: producing a layer of negative photoresist sensitive to the emission wavelength, covering the array of the nanowires; activating the array of the nanowires under electrical control or optical control so the active nanowires emit the radiation, the radiation decreasing the solubility of the negative resist; developing the resist level with the defective nanowires, leaving zones made less soluble and encircling the active nanowires; and removing the conductive layer above the defective nanowires. A process for fabricating one or more light-emitting diodes using the process is provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.