Semiconductor light emitting device
US9300111B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 14, 2014 |
| Grant date | Mar 29, 2016 |
| Priority date | — |
| Expiry date | Jan 18, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/018
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor light emitting device includes a conductive substrate, a light emitting laminate including a second conductivity type semiconductor layer, an active layer, and a first conductivity type semiconductor layer stacked on the conductive substrate, a first electrode layer electrically connected to the first conductivity type semiconductor layer, a second electrode layer between the conductive substrate and the second conductivity type semiconductor layer, the second electrode layer being electrically connected to the second conductivity type semiconductor layer, and a passivation layer between the active layer and the second electrode layer, the passivation layer covering at least a lateral surface of the active layer of the light emitting laminate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.