Compositions and methods for CMP of silicon oxide, silicon nitride, and polysilicon materials
US9303187B2 · kind B2 · utility
1Cited by
3References
7Claims
0Family size
Assignee
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Key dates
| Filing date | Jul 22, 2013 |
| Grant date | Apr 5, 2016 |
| Priority date | — |
| Expiry date | Oct 23, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3212
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
The present invention provides a chemical mechanical polishing method for polishing a substrate comprising silicon dioxide, silicon nitride, and polysilicon. The method comprises abrading a surface of the substrate with a CMP composition to remove at least some silicon dioxide, silicon nitride and polysilicon therefrom. The CMP composition comprising a particulate ceria abrasive suspended in an aqueous carrier having a pH of about 3 to 9.5 and containing a cationic polymer; wherein the cationic polymer consists of a quaternary methacryloyloxyalkylammonium polymer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.