Self-referenced magnetic random access memory (MRAM) and method for writing to the MRAM cell with increased reliability and reduced power consumption
US9305628B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Dec 2, 2013 |
| Grant date | Apr 5, 2016 |
| Priority date | — |
| Expiry date | Dec 2, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01F10/3254
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
MRAM cell including a magnetic tunnel junction including a sense layer, a storage layer, a tunnel barrier layer and an antiferromagnetic layer exchange-coupling the storage layer such that the storage magnetization can be pinned when the antiferromagnetic layer is below a critical temperature and freely varied when the antiferromagnetic layer is heated at or above the critical temperature. The sense layer is arranged such that the sense magnetization can be switched from a first stable direction to another stable direction opposed to the first direction. The switched sense magnetization generates a sense stray field being large enough for switching the storage magnetization according to the switched sense magnetization, when the magnetic tunnel junction is heated at the writing temperature. The disclosure also relates to a method for writing to the MRAM cell with increased reliability and reduced power consumption.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.