Solid electrolyte based memory devices and methods having adaptable read threshold levels
US9305643B2 · kind B2 · utility
2Cited by
31References
20Claims
0Family size
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Key dates
| Filing date | Mar 26, 2013 |
| Grant date | Apr 5, 2016 |
| Priority date | — |
| Expiry date | May 20, 2033 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/28
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method can include determining at least one use characteristic for the memory cells comprising a solid electrolyte, the use characteristic corresponding to a number of times the memory cells have been programmed to at least one impedance level; and adjusting a read threshold level for the memory cells based on at least the use characteristic, the read threshold level determining data values stored in the memory cells in a read operation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.