Measuring method, data processing apparatus and electron microscope using same
US9305744B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 27, 2012 |
| Grant date | Apr 5, 2016 |
| Priority date | — |
| Expiry date | Sep 27, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/2817
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
The objective of the invention is to provide a measuring method that can determine pattern contours and dimensions with high precision even if an object to be measured shrinks due to electron beam radiations. In order to achieve this objective, a method, which performs measurements by irradiating an electron beam onto a sample having a pattern formed on a primary coating thereof, prepares an SEM image and contour of the pattern (S201, S202), material parameters of the pattern part and primary coating part of the sample (S203, S204), and a beam condition in irradiating the electron beam onto the sample (S205), and uses these prepared things to calculate a pattern shape or dimensions before the irradiation of the electron beam (S206).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.