Method of matching two or more plasma reactors
US9305748B2 · kind B2 · utility
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3References
13Claims
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Key dates
| Filing date | Oct 28, 2013 |
| Grant date | Apr 5, 2016 |
| Priority date | — |
| Expiry date | Jun 11, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3299
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Etch rate distributions are captured at a succession of hardware tilt angles of the RF source power applicator relative to the workpiece and their non-uniformities computed, and the behavior is modeled as a non-uniformity function for each one of at least two plasma reactors. An offset Δα in tilt angle α between the non-uniformity functions of the two plasma reactors is detected. The two plasma reactors are then matched by performing a hardware tilt in one of them through a tilt angle equal to the offset Δα.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.