Semiconductor device with oxide layer as transparent electrode
US9305939B2 · kind B2 · utility
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2References
12Claims
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Key dates
| Filing date | May 28, 2013 |
| Grant date | Apr 5, 2016 |
| Priority date | — |
| Expiry date | May 28, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D99/00
Abstract
A semiconductor device has: a first transparent electrode, a drain electrode, and a source electrode formed on a substrate; an oxide layer joined electrically to the source electrode and the drain electrode and containing a semiconductor region; an insulating layer formed on the oxide layer and the first transparent electrode; a gate electrode formed on the insulating layer; and a second transparent electrode formed so as to overlap at least a part of the first transparent electrode with the insulating layer interposed therebetween. The oxide layer and the first transparent electrode are formed of the same oxide film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.