Semiconductor device and method for manufacturing the same

US9306003B2 · kind B2 · utility

Assignee

• INSTITUTE OF MICROELECTRONICS OF THE CHINESE ACADEMY OF SCIENCES · CN

Inventors

• Jing Xu · Buffalo, US
• Jiang Yan · Beijing, CN
• Bangming Chen · Shanghai, CN
• Hongli Wang · Beijing, CN
• Bo Tang · Lo Wu, CN
• Zhaoyun Tang · Beijing, CN
• Yefeng Xu · Beijing, CN
• Chunlong Li · Beijing, CN
• Mengmeng YANG · Hefei, CN

Key dates

• Filing date: Aug 15, 2014
• Grant date: Apr 5, 2016
• Expiry date: Aug 15, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/0212
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A semiconductor device, including: a substrate having a first semiconductor material; a second semiconductor layer on the substrate; a third semiconductor layer on the second semiconductor layer and being a device formation region; an isolation structure on both sides of the third semiconductor layer and on the substrate; and an insulating layer below the source and drain regions of the third semiconductor layer and between the isolation structure and the ends of the second semiconductor layer.