Semiconductor arrangement

US9306010B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Hans-Joachim Schulze · Taufkirchen, DE
• Manfred Kotek · Villach, AT
• Johannes Baumgartl · Arnoldstein, AT
• Markus Harfmann · Tuttlingen, DE
• Christian Krenn · Pernegg, AT
• Thomas Neidhart · Klagenfurt, AT

Key dates

• Filing date: Mar 14, 2012
• Grant date: Apr 5, 2016
• Expiry date: Jun 12, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/8503
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A first semiconductor zone of a first conduction type is formed from a semiconductor base material doped with first and second dopants. The first and second dopants are different substances and also different from the semiconductor base material. The first dopant is electrically active and causes a doping of the first conduction type in the semiconductor base material, and causes either a decrease or an increase of a lattice constant of the pure, undoped first semiconductor zone. The second dopant may be electrically active, and may be of the same doping type as the first dopant, causes one or both of: a hardening of the first semiconductor zone; an increase of the lattice constant of the pure, undoped first semiconductor zone if the first dopant causes a decrease, and a decrease of the lattice constant of the pure, undoped first semiconductor zone if the first dopant causes an increase, respectively.