Semiconductor device having areas with different conductivity types and different doping concentrations

US9306011B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Markus Zundel · Egmating, DE
• Thomas Schweinboeck · Grafing, DE
• Jesper Wittborn · Bromma, SE
• Erwin Bacher · Villach, AT
• Juergen Holzmueller · Reichenbach/Oberlausitz, DE
• Hans-Joachim Schulze · Taufkirchen, DE

Key dates

• Filing date: Oct 9, 2013
• Grant date: Apr 5, 2016
• Expiry date: Jan 24, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10K71/10
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A semiconductor device includes a semiconductor substrate. The semiconductor substrate includes a plurality of first doping regions of a first doping structure arranged at a main surface of the semiconductor substrate and a plurality of second doping regions of the first doping structure arranged at the main surface of the semiconductor substrate. The first doping regions of the plurality of first doping regions of the first doping structure include dopants of a first conductivity type with different doping concentrations. Further, the second doping regions of the plurality of second doping regions of the first doping structure include dopants of a second conductivity type with different doping concentrations. At least one first doping region of the plurality of first doping regions of the first doping structure partly overlaps at least one second doping region of the plurality of second doping regions of the first doping structure causing an overlap region arranged at the main surface.