Graphene devices and methods of fabricating the same
US9306021B2 · kind B2 · utility
1Cited by
6References
27Claims
0Family size
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Key dates
| Filing date | Apr 3, 2014 |
| Grant date | Apr 5, 2016 |
| Priority date | — |
| Expiry date | Apr 3, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/256
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A graphene device includes: a semiconductor substrate having a first region and a second region; a graphene layer on the first region, but not on the second region of the semiconductor substrate; a first electrode on a first portion of the graphene layer; a second electrode on a second portion of the graphene layer; an insulating layer between the graphene layer and the second electrode; and a third electrode on the second region of the semiconductor substrate. The semiconductor substrate has a tunable Schottky barrier formed by junction of the graphene layer and the semiconductor substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.