Patent · US Active

III-V semiconductor structures including aluminum-silicon nitride passivation

US9306050B2 · kind B2 · utility

0Cited by

24References

22Claims

0Family size

Assignee

Cornell University · IT

Inventors

James R. Shealy · Ithaca, US
Richard J. Brown · Los Gatos, US

Key dates

Filing date	Jun 28, 2010
Grant date	Apr 5, 2016
Priority date	—
Expiry date	Jun 1, 2031

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/0002
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A semiconductor structure includes a semiconductor layer that is passivated with an aluminum-silicon nitride layer. When the semiconductor layer in particular comprises a III-V semiconductor material such as a group III nitride semiconductor material or a gallium nitride semiconductor material, the aluminum-silicon nitride material provides a superior passivation in comparison with a silicon nitride material.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.