Patent · US Active

Semiconductor device and integrated apparatus comprising the same

US9306064B2 · kind B2 · utility

8Cited by

2References

16Claims

0Family size

Assignee

Infineon Technologies Austria AG · AT

Inventors

Uwe Wahl · Munich, DE
Armin Willmeroth · Friedberg, DE

Key dates

Filing date	Oct 30, 2014
Grant date	Apr 5, 2016
Priority date	—
Expiry date	Oct 30, 2034

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY02B70/10
WIPO fieldElectrical machinery, apparatus, energy
WIPO sectorElectrical engineering

Abstract

The present disclosure provides a semiconductor device and an integrated apparatus having the same. The semiconductor device includes a substrate, a buffer layer on the substrate, a compensation area which includes a p-region and a n-region on the buffer layer, and a transistor cell on the compensation area. The transistor cell includes a source region, a body region, a gate electrode and a gate dielectric formed at least between the gate electrode and the body region. The gate dielectric has a thickness in a range of 12 nm to 50 nm.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.