Patent · US Active

3D MEMS device and method of manufacturing

US9309106B2 · kind B2 · utility

9Cited by
181References
30Claims
0Family size

Assignee

Inventors

Key dates

Filing dateFeb 13, 2015
Grant dateApr 12, 2016
Priority date
Expiry dateFeb 13, 2035

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2224/94
  • WIPO fieldMicro-structural and nano-technology
  • WIPO sectorChemistry

Abstract

A MEMS device is provided. The device includes a MEMS wafer, a top cap wafer and a bottom cap wafer. The top and bottom cap wafers are respectively bonded to first and second sides of the MEMS wafer, the MEMS and cap wafers being electrically conductive. The outer side of the top cap wafer is provided with electrical contacts. The MEMS wafer, the top cap wafer and the bottom cap wafer define a cavity for housing a MEMS structure. The device includes insulated conducting pathways extending from within the bottom cap wafer, through the MEMS wafer and through the top cap wafer. The pathways are connected to the respective electrical contacts on the top cap wafer, for routing electrical signals from the bottom cap wafer to the electrical contacts on the top cap wafer. A method of manufacturing the MEMS device is also provided.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.