Method of encapsulating a microelectronic device by a getter material
US9309110B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 29, 2009 |
| Grant date | Apr 12, 2016 |
| Priority date | — |
| Expiry date | Jul 27, 2030 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB81C2203/0145
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A method of encapsulating a microelectronic device arranged on a substrate, comprising at least the following steps: a) formation of a portion of sacrificial material covering at least one part of the microelectronic device, the volume of which occupies a space intended to form at least one part of a cavity in which the device is intended to be encapsulated; b) deposition of a layer based on at least one getter material, covering at least one part of the portion of sacrificial material; c) formation of at least one orifice through at least the layer of getter material, forming an access to the portion of sacrificial material; d) elimination of the portion of sacrificial material via the orifice, forming the cavity in which the microelectronic device is encapsulated; and e) sealing of the cavity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.