Correction for stress induced leakage current in dielectric reliability evaluations
US9310418B2 · kind B2 · utility
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22Claims
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Key dates
| Filing date | Nov 7, 2014 |
| Grant date | Apr 12, 2016 |
| Priority date | — |
| Expiry date | Nov 7, 2034 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01R31/2621
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
Methods, apparatus, and computer program products for evaluating current transients measured during an electrical stress evaluation of a dielectric layer in a semiconductor device. Measured current transients are fit to an equation representing a time dependence for stress induced leakage currents. The measured current transients are corrected based upon stress currents computed from the equation to define corrected current transients.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.