Patent · US Active

Group III-V substrate material with particular crystallographic features and methods of making

US9312129B2 · kind B2 · utility

1Cited by

4References

20Claims

0Family size

Assignee

SAINT-GOBAIN CRISTAUX ET DETECTEURS · FR

Inventors

Jean-Pierre Faurie · Valbonne, FR
Bernard Beaumont · Le Tignet, FR

Key dates

Filing date	Sep 4, 2013
Grant date	Apr 12, 2016
Priority date	—
Expiry date	Feb 1, 2034

Classification

Technology area (CPC H)Electricity
CPC primaryH01L21/0262
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method of forming a semiconductor substrate including providing a base substrate including a semiconductor material, and forming a first semiconductor layer overlying the base substrate having a Group 13-15 material via hydride vapor phase epitaxy (HVPE), the first semiconductor layer having an upper surface having a N-face orientation.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.