Reduction of native oxides by annealing in reducing gas or plasma
US9312137B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 31, 2013 |
| Grant date | Apr 12, 2016 |
| Priority date | — |
| Expiry date | Dec 31, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28238
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Native oxide growth on germanium, silicon germanium, and InGaAs undesirably affects CET (capacitive equivalent thickness) and EOT (effective oxide thickness) of high-k and low-k metal-oxide layers formed on these semiconductors. Even if pre-existing native oxide is initially removed from the bare semiconductor surface, some metal oxide layers are oxygen-permeable in thicknesses below about 25 Å thick. Oxygen-containing species used in the metal-oxide deposition process may diffuse through these permeable layers, react with the underlying semiconductor, and re-grow the native oxide. To eliminate or mitigate this re-growth, the substrate is exposed to a gas or plasma reductant (e.g., containing hydrogen). The reductant diffuses through the permeable layers to react with the re-grown native oxide, detaching the oxygen and leaving the un-oxidized semiconductor. The reduction product(s) resulting from the reaction may then be removed from the substrate (e.g., driven off by heat).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.